A. Ambrózy, P. Gottwald, B. Szentpáli: Surface effects on the low frequency noise of thin GaAs layers. Proc. Noise in Physical Systems and 1/f Fluctuations (Edited by T. Musha et al.), pp.23 - 26.A. Ohmsha Ltd., Kyoto, Japan (1991).

P. Gottwald, B. Szentpáli, Zs. Kincses: Surface effects on the low frequency noise of thin InP layers. Proc. Noise in Physical Systems and 1/f Fluctuations (Edited by V. Bareikis and R. Katilius), pp. 299 -302. World Scientific, Palanga, Lithuania (1995).

P. Gottwald, R. Riemenschneider, B. Szentpáli, H. L. Hartnagel, Zs. Kincses, M. Ruszinko: Comparison of Photo- and Plasma-Assisted Passivating Process Effects on GaAs Devices by Means of Low-Frequency Noise Measurements. Solid-State Electronics Vol. 38, p.413., (1995).

P. Gottwald, B. Szentpáli, Zs. Kincses: Anomalous additional low-frequency noise of surface origin generated in thin GaAs and InP layers. Proc. 1th International Conf. on Unsolved Problems of Noise UPoN, (Edited by Ch. Doering et al.), pp.122-127. Szeged, Hungary (1996).

R. Riemenschneider, H. L. Hartnagel, P. Gottwald, Zs. Kincses, B. Szentpáli, H. Kräutle, E. Kuphal: Characterization of SiO₂ deposition by low-temperature plasma and photo CVD using low-frequency noise measurements. Proc. Noise in Physical Systems and 1/f Fluctuations (Edited by V. Bareikis and R. Katilius), pp.598-601. World Scientific, Palanga, Lithuania (1995).

P. Gottwald, H. Kräutle, B. Szentpáli, Zs. Kincses, H. L. Hartnagel: Damage characterisation of InP after Reactive Ion Etching using the low-frequency noise measurement technique. Solid-State Electronics Vol. 41, p.539., (1997).

P. Gottwald, H. Kräutle, B. Szentpáli: Results on passivation of InP by photo-CVD SiO2 and SiNx obtained by using the low-frequency noise measurement technique Fluctuation and Noise Letters Vol.1 L35-L43. (2001).

P. Gottwald, B. Szentpáli: Low-frequency Noise Measurements for Investigating Passivation Methods Applied for Semiconductors, Hiradástechnika Vol. LVIII, No. 6. pp. 40-46 (2003).

P. Gottwald, Zs. Kincses, B. Szentpáli: Low-Frequency Noise in MBE grown thin InGaAs layers lattice matched to InP and capped by an undoped InAlAs layer Proc. Noise in Physical Systems and 1/f Fluctuations (Edited by C. Claeys and E. Simoen), pp. 461-464. World Scientific, Leuven, Belgium (1997).

B.Szentpáli , P.Gottwald, T. Mohácsy, K. Molnár, I. Bársony: "Low frequency noise in porous Si LED", in Proceedings of SPIE Vol. 5113 Noise in Devices and Circuits, edited by M. Jamal Deen, Zeynep Çelik-Buttler, Michael E. Levinshtein, (SPIE, Bellingham, WA, 2003) 398-405.

P. Gottwald: Probleme der optischen Lithographie in der MeSFET Technologie. Seminarvortrag, Gerhard-Mercator-Universität Duisburg - Halbleitertechnik (1986).

I. Mojzes, B. Szentpáli, B. Kovács, P. Gottwald, S. Biró: Measuring and Modeling of DC Characteristics of Ion-implanted MESFET's. Proc. of the 8^th Int. Conf. on Microwave Communication. pp. 163-164., Academic Press, Budapest (1986).

C. Heedt, P. Gottwald, W. Prost, F.-J. Tegude, H. Künzel, J. Dickmann, H. Dämbkes: Material Characterization of InGaAs/InAlAs Heterostructure Field Effect Transistors with Heavily Doped n-Type InAlAs Donor Layer. Proc.3^rd InP & Related Materials Conference, (IEEE Lasers and Electro-optics Soc. & IEEE Electron Devices Soc.) pp. 284-287.,Cardiff, UK, April. (1991).

C. Heedt, P. Gottwald, F. Scheffer, W. Prost, H. Künzel, F.-J. Tegude: Transport and Deep-Level Characterisation of InGaAs/InAlAs Heterostrustures with Heavily Doped n-Type InAlAs Donor Layer. WOCSDICE, 1991, Grönenbach, Germany, . May (1991).

C.Heedt, P. Gottwald, F. Buchali, W. Prost, H. Künzel, F.-J. Tegude: On the Optimization and Reliability of Ohmic- and Schottky Contacts to InAlAs/InGaAs HFET. Proc. 4^th InP & Related Materials Conference, pp. 238-241., Newport, USA, April. (1992).

P. Gottwald : Comments on Photoparametric Amplifier. Proc. IEEE, Vol.56., , No. 8. August, pp. 1355-1356. (1968).

A. Baranyi, P. Gottwald: Optical Synchronisation MESFET Oscillators. European Microwave Conference, EuMC`90., Conf. Proc., Pap. No. B 6.1. Budapest, Hungary (1990).

F. Riesz, B. Szentpáli, P. Gottwald, M. Németh- Sallay: A Novel MESFET-Compatible GaAs Optoelectronic Switch. Microwave and Optical Technology Letters, Vol.5.,., No.3., pp. 112-114 (1992).

T. Berceli, I. Frigyes, P. Gottwald, R. P. Herczfeld, F. Mernyei: Inprovements in Fiber-Optic Transmission of Multi-Carrier TV Signals. IEEE Trans. on MTT, Vol. MTT-40. No. 5., pp. 910-915. (1992).

A. Ambrózy, P. Gottwald, V. Székely: Measuring Instruments for Hyperabrupt Varactor Tuning Diodes. Periodica Polytechnica/ Electrical Eng., Vol. 14.,. No. 3., pp. 301-310. Budapest (1970).

Dr. P. Gottwald, Dr. A. Ambrózy.: Measurement of The Dopant Distribution in Thin Epitaxial Si and GaAs Structures. Periodica Polytechnica/ Electrical Eng. Vol. 24., No. 1/2., pp 11-18 Budapest (1980).